Ultrawide Bandgap β-Ga2O3 Semiconductor

Beta-phase gallium oxide (β-Ga2O3) is a material of growing interest as a potential next-generation power semiconductor with its ultrawide bandgap, predicted breakdown field, and affordability of native substrates. Ultrawide Bandgap β-Ga2O3 Semiconductor: Theory and Applications is a comprehensive overview of β-Ga2O3 semiconductor and its application in power electronic devices. It introduces readers to fundamental properties, addresses recent developments and existing challenges in growth and devices of β-Ga2O3, and offers insights to the future direction of commercialization through chip and circuit integration.

Covering a wide range of power devices, the book discusses:

• The properties of β-Ga2O3 that make it a potential next-generation semiconductor material
• A variety of techniques for producing and modifying β-Ga2O3 electronic properties
• An introduction to device concepts, fabrication, and functionality evaluation for prospective high power, high-frequency, and extreme-environment applications
• Commercialization challenges and how they may be addressed to make them a viable option

Ultrawide Bandgap β-Ga2O3 Semiconductor: Theory and Applications answers the needs of both researchers and professionals in semiconductor devices, electronic materials, solid-state physics, consumer electronics, communications, and all other industries reliant on semiconductors.